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| Micropower Voltage Reference Features Description The AS1004 is a two-terminal precision band-gap voltage reference with a low turn-on current of 10 A. Emulating a 1.235 V zener diode, the AS1004 operates more than three orders of magnitude of output current with minute output impedance and guaranteed stability. With an initial tolerance of 4 mV and guaranteed temperature performance, it is ideal for precision instrumentation, especially in low power applications. Being a low-voltage reference, the AS1004 is also well-suited as a reference for low-voltage power supply applications, especially in power supplies intended for low-voltage logic systems, laptop computers and other portable or battery operated equipment. The AS1004 is pin-for-pin compatible with the LT1004 and the LM385 and offers improved specifications over both the LM385 and the MP5010. It is also available as a 2.5 V reference with a guaranteed start-up current of 20 A. AS1004 * * * * * * * * Low voltage reference 10 A turn-on current for AS1004-1.2 20 A turn-on current for AS1004-2.5 4 mV (0.3 %) initial accuracy for AS1004-1.2 20 mV (0.8 %) initial accuracy for AS1004-2.5 Guaranteed operation to 20 mA. Over three orders of magnitude of operating current! Temperature performance guaranteed Very low dynamic impedance Pin Configuration -- TO-92 (LP) Top view SOIC (D) SOT-89 (S) N/C 1 2 3 4 8 7 6 5 CATHODE N/C ANODE N/C N/C CATHODE N/C CATHODE ANODE ANODE N/C ANODE CATHODE Ordering Information Description Temperature Range Order Codes TO-92 8-Pin Plastic SOIC SOT-89 (c) ASTEC Semiconductor 0 to 70 C 0 to 70 C 0 to 70 C 29 AS1004-1.2LP AS1004-1.2D AS1004-1.2S AS1004-2.5LP AS1004-2.5D AS1004-2.5S AS1004 Simplified Schematic Micropower Voltage Reference K R2 Q13 Q12 Q4 Q3 C2 R10 Q7 R4 Q11 C3 R11 Q5 Q10 Q1 C1 R12 Q9 Q14 Q8 R6 R7 Q6 A Absolute Maximum Ratings Parameter Symbol Rating Units Reverse Breakdown Current Forward Current Continuous Power Dissipation at 25 C TO-92 8LSOIC SOT-89 Maximum Junction Temp Storage Temperature Lead Temperature, Soldering 10 Seconds IZ IF PD 30 30 mA mA 775 750 1000 TJ TSTG TL 150 - 65 to 150 300 mW mW mW C C C Recommended Conditions Parameter Symbol Rating Unit Typical Thermal Resistances Package JA JC Typical Derating Cathode Current IZ 100 A TO-92 8L SOIC SOT-89 160 C/W 175 C/W 110 C/W 80 C/W 45 C/W 8 C/W 6.3 mW/C 5.7 mW/C 9.1 mW/C ASTEC Semiconductor 30 Micropower Voltage Reference Electrical Characteristics AS1004 Electrical Characteristics are guaranteed over full junction temperature range (0 to 70 C). Ambient temperature must be derated based on power dissipation and package thermal characteristics. Parameter Reverse Breakdown Voltage Symbol VZ Test Condition IZ = 100 A, TJ = 25 C 0 C TA 70 C Average Temperature Coefficient Minimum Operating Current Reverse Breakdown Voltage Change With Current VZ /T IZ (min) VZ /IZ Imin IZ 1 mA Over Temperature 1 mA IZ 20 mA Over Temperature Reverse Dynamic Impedance ZZ IZ = 100 mA, f = 25 Hz Over Temperature Wide Band Noise Long Term Stability en VZ /T IZ = 100 A 10 Hz f 10 KHz IZ = 100 A TA = 25 C 0.1 C Imin IZ 20 mA Min AS1004-1.2 Typ Max 1.235 1.235 20 4 0.5 0.5 6.5 6.5 0.2 1 60 20 10 1 1.5 10 20 0.6 1.5 60 60 1.239 1.245 Min 2.480 2.470 AS1004-2.5 Typ Max 2.500 2.500 60 12 0.5 0.5 6.5 6.5 0.8 20 1 1.5 10 20 0.9 1.5 2.520 2.530 Unit V V ppm/C A mV mV mV mV V ppm/kH 1.231 1.225 Typical Performance Curves Calculating Average Temperature Coefficient for the AS1004-1.2 Reference 1.245 AS1004-1.2 Reference Voltage vs. Ambient Temperature IZ = 100 A ppm 0 0 0 VREF V Z - Reference Voltage (V) mV % T 1.240 -5 5000 0.5 1.235 -10 0 10 20 30 40 50 60 70 Temperature (C) 0.025 mV/ C 0.002 %/ C 20 ppm/ C Average Temperature Coefficient = VREF T 1.230 1.225 -55 -35 -15 5 25 45 65 85 TA - Ambient Temperature (C) 105 125 Figure 1 ASTEC Semiconductor Figure 2 31 AS1004 Typical Performance Curves Micropower Voltage Reference Calculating Average Temperature Coefficient for the AS1004-2.5 Reference ppm mV 2.520 AS1004-2.5 Reference Voltage versus Ambient Temperature IZ = 100 A 0 0 % 0 VREF V Z - Reference Voltage (V) T -5 5000 0.5 2.510 2.500 -10 0 10 20 30 40 50 60 70 Temperature (C) 0.046 mV/ C 0.004 %/ C 37 ppm/ C Average Temperature Coefficient = VREF T 2.490 2.480 -55 -35 -15 5 25 45 65 85 TA - Ambient Temperature (C) 105 125 Figure 3 Figure 4 AS1004-1.2 Reverse Operating Characteristics 100 TA = -55 C to 125 C 100 AS1004-2.5 Reverse Operating Characteristics TA = -55 C to 125 C IR - Reverse Current (A) 10 IR - Reverse Current (A) 0 0.2 0.4 0.8 0.6 1 VR - Reverse Voltage (V) 1.2 1.4 10 1 1 0.1 0.1 0 0.5 1.0 1.5 2.0 VR - Reverse Voltage (V) 2.5 3.0 Figure 5 Figure 6 ASTEC Semiconductor 32 Micropower Voltage Reference Typical Performance Curves AS1004 AS1004-1.2 Change in Reference Voltage versus Reverse Current 16 TA = -55 C to 125 C VZ - Change In Reference Voltage (mA) AS1004-2.5 Change in Reference Voltage versus Reverse Current 16 TA = -55 C to 125 C 12 VZ - Change In Reference Voltage (mA) 0.1 1 10 IR - Reverse Current (mA) 100 12 8 8 4 4 0 0 -4 0.01 -4 0.01 0.1 1 10 IR - Reverse Current (mA) 100 Figure 7 Figure 8 AS1004-1.2 Transient Response 1.5 3 AS1004-2.5 Transient Response 1 OUTPUT Input and Output Voltage (V) 36 k Input and Output Voltage (V) 2 OUTPUT 36 k VI VO 0.5 VI VO 1 0 5 0 5 INPUT INPUT 0 0 50 t - Time (s) 100 500 600 0 0 50 t - Time (s) 100 500 600 Figure 9 Figure 10 ASTEC Semiconductor 33 AS1004 Typical Performance Curves Micropower Voltage Reference AS1004-1.2 Reverse Dynamic Impedance 10 k tZ = 100 A TA = 25 C 10 k AS1004-2.5 Reverse Dynamic Impedance tZ = 100 A TA = 25 C ZZ - Reference Impedance () 100 ZZ - Reference Impedance () 100 1k 1k 100 10 10 1 1 0.1 0.01 0.1 1 10 f = Frequency (kHz) 1k 0.1 0.01 0.1 1 10 f = Frequency (kHz) 100 1k Figure 11 Figure 12 Forward Characteristics 1.2 TA = 25 C Low Frequency Reverse Dynamic Impedance 100 TA = -55 C to 125 C f = 25 Hz 0.8 ZZ - Reference Impedance () V F - Forward Voltage (V) 10 0.4 1 0 0.01 0.1 1 10 IF = Forward Current (mA) 100 0.1 0.01 0.1 1 10 IZ - Reverse Current (mA) 100 Figure 13 Figure 14 ASTEC Semiconductor 34 Micropower Voltage Reference Typical Applications 1.235V Reference VIN 3k OUT AS1004-1.2 AS1004 2.5V Reference VIN 100 k OUT AS1004-2.5 Low Noise Reference VIN 100 k 22 OUT AS1004-2.5 50 F Figure 15 Figure 16 Figure 17 Variable Output Regulator V IN High Stability 5V Regulator VIN 8 V OUT 200 + 10 F 5k VIN LM317 VOUT ADJ VIN LM338 VOUT ADJ 5 V OUT 976 , 1% 0.1 F + 22 F AS1004-2.5 AS1004-2.5 R VV - - 1V 0.015 mA 324 , 1% Figure 18 Figure 19 Lead Acid Low Battery Detector Micropower 10V Reference VIN = 12 V to 20 V LO = Battery Low 86.7 k 12 V 500 k 1M 7 + LM4250 + - 500 k AS1004-1.2 150 pF 3 2- 4 6 8 22 M 150 pF 3.5 M AS1004-1.2 500 k Figure 20 ASTEC Semiconductor Figure 21 35 AS1004 Notes Micropower Voltage Reference ASTEC Semiconductor 36 |
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